(1) Soo Hyun Kim, In-Hwan Baek, Da Hye Kim, Jung Joon Pyeon, Taek-Mo Chung, Seung-Hyub Baek, Jin-Sang Kim, Jeong Hwan Han,** and Seong Keun Kim** “Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films” Journal of Materials Chemistry C, 2017, 5, 3139.
(2) Raphael Edem Agbenyeke, Eun Ae Jung, Bo Keun Park, Taek-Mo Chung, Chang Gyoun Kim,** Jeong Hwan Han** “Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands”, Applied Surface Science, 2017, 419, 758.
(3) Hyo Yeon Kim, Eun Ae Jung, Geumbi Mun, Raphael E. Agbenyeke, Bo Keun Park, Jin-Seong Park, Seung Uk Son, Dong Ju Jeon, Sang-Hee Ko Park, Taek-Mo Chung,** and Jeong Hwan Han** “Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application”, ACS Applied Materials & Interfaces, 2016, 8, 26924.
(4) Jeong Hwan Han, Yoon Jang Chung, Bo Keun Park, Seong Keun Kim, Hyo-Suk Kim, Chang Gyoun Kim, and Taek-Mo Chung, “Growth of p type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O”, Chemistry of Materials, 2014, 26, 6088.
(5) Hyo Jun Jung,* Jeong Hwan Han,* Eun Ae Jung, Bo Keun Park, Jin-Ha Hwang, Seung Uk Son, Chang Gyoun Kim, Taek-Mo Chung, and Ki-Seok An, “Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene) ruthenium Complex and O2”, Chemistry of Materials, 2014, 26, 7083.
(6) Jeong Hwan Han, Laura Nyns, Annelies Delabie, Alexis Franquet, Sven Van Elshocht, and Christoph Adelmann, “Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O”, Chemistry of Materials, 2014, 26, 1404.
(7) Jeong Hwan Han, Elisaveta Ungur, Alexis Franquet, Karl Opsomer, Thierry Conard, Alain Moussa, Stefan De Gendt, Sven Van Elshocht, and Christoph Adelmann, “Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3 : growth behaviour and film characteristics” Journal of Materials Chemistry C, 2013, 1, 5981.
(8) Jeong Hwan Han, Woongkyu Lee, Woojin Jeon, Sang Woon Lee, and Cheol Seong Hwang, “Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 layers”, Chemistry of Materials, 2012, 24, 4686.
(9) Jeong Hwan Han, Sang Woon Lee, Seong Keun Kim, Sora Han, Cheol Seong Hwang, Christian Dussarrat, and Julien Gatineau, “Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas”, Chemistry of Materials, 2010, 22, 5700.
(10) Jeong Hwan Han, Sang Woon Lee, Gyu-Jin Choi, Sang Young Lee, Cheol Seong Hwang, Christian Dussarrat and Julien Gatineau, “Chemical vapor deposition of Ru thin films with an enhanced morphology, thermal stability and electrical properties using a RuO4 precursor”, Chemistry of Materials, 2009, 21, 207.
◾ High-performance of ZnO/TiO2 heterostructured thin-film photocatalyst fabricated via atomic layer deposition, Journal of Vacuum Science & Technology A, 2024한정환
◾ Growth of conformal TiN thin film with low resistivity and impurity via hollow cathode plasma atomic layer deposition, Journal of Vacuum Science & Technology A, 2024한정환
◾ Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis (isopropylcyclopentadienyl) molybdenum (IV) dihydride and an H2/N2/Ar plasma, Journal of Vacuum Science & Technology A, 2023한정환
◾ Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor, Surfaces and Interfaces, 2023한정환
◾ Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition, Journal of Vacuum Science & Technology A, 2023한정환
◾ Phase-controlled molybdenum dioxide electrodes by RF reactive magnetron sputtering for achieving high-k rutile TiO2 dielectric, Vacuum, 2023한정환
◾ Electromigration Reliability of Barrierless Ruthenium and Molybdenum for Sub-10 nm Interconnection, ACS Applied Electronic Materials, 2023한정환
◾ High Field-Effect Mobility and On/Off Current Ratio of p-Type ALD SnO Thin-Film Transistor, ACS APPLIED ELECTRONIC MATERIALS, vol.5 No.4 pp.1992~1999, 2023한정환
◾ 표면 반응 제어를 통한 영역 선택적 원자층 증착법 연구 동향, 한국표면공학회지, vol.55 No.6 pp.328~341, 2022한정환
◾ Thermal atomic layer deposition of molybdenum carbide films using bis(ethylbenzene)molybdenum and H-2, Journal of Vacuum Science & Technology A, 2022한정환
◾ Atomic layer deposition of ZnO layers on Bi2Te3 powders: Comparison of gas fluidization and rotary reactors, CERAMICS INTERNATIONAL, vol.48 No.21 pp.36773~36780, 2022한정환
◾ Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) and oxygen, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.156, 2022한정환
◾ High-performance Atomic-Layer-Deposited SnO thin film transistors fabricated by intense pulsed light annealing, Applied Surface Science, 2022한정환
◾ Polycrystalline and high purity SnO2 films by plasma-enhanced atomic layer deposition using H2O plasma at very low temperatures of 60-90 degrees C, VACUUM, vol.196, 2022한정환
◾ Improved dielectric constant and leakage current characteristics of BaTiO3 thin film on SrRuO3 seed layer, JOURNAL OF ALLOYS AND COMPOUNDS, vol.895, 2022한정환
◾ Phase-gradient atomic layer deposition of TiO2 thin films by plasma-induced local crystallization, CERAMICS INTERNATIONAL, vol.47 No.20 pp.28770~28777, 2021한정환
◾ Atomic Layer Deposition of Cu2SnS3 Thin Films: Effects of Composition and Heat Treatment on Phase Transformation, CHEMISTRY OF MATERIALS, vol.33 No.20 pp.8112~8123, 2021한정환
◾ Seed layer mediated growth of high dielectric and low leakage BaTiO3 thin film using two-step sputtering process, CERAMICS INTERNATIONAL, vol.47 No.18 pp.25826~25831, 2021한정환
◾ Atomic-layer-deposited SnO film using novel Sn(dmamb)(2) precursor for p-channel thin film transistor, APPLIED SURFACE SCIENCE, vol.547, 2021한정환
◾ Tunable solid electrolyte interphase formation on SiO anodes using SnO artificial layers for Lithium-ion batteries, APPLIED SURFACE SCIENCE, vol.549, 2021한정환
◾ Substrate Surface Modification for Enlarging Two-Dimensional SnS Grains at Low Temperatures, CHEMISTRY OF MATERIALS, vol.32 No.20 pp.9026~9033, 2020한정환
◾ Simultaneous etching of underlying metal oxide and sulfide thin films during Cu2S atomic layer deposition, APPLIED SURFACE SCIENCE, vol.524, 2020한정환
◾ Highly efficient photocatalytic methylene blue degradation over Sn(O,S)/TiO2 photocatalyst fabricated via powder atomic layer deposition of SnO and subsequent sulfurization, MATERIALS LETTERS, vol.272, 2020한정환
◾ Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition, COATINGS, vol.10 No.7, 2020한정환
◾ Highly sensitive flexible NO2 sensor composed of vertically aligned 2D SnS2 operating at room temperature, Journal of Materials Chemistry C, 2020한정환
◾ Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis (ethylcyclopentadienyl)magnesium precursor, CERAMICS INTERNATIONAL, vol.46 No.8 pp.10115~10120, 2020한정환
◾ Atomic-layer-deposited SnO2 on Pt/C prevents sintering of Pt nanoparticles and affects the reaction chemistry for the electrocatalytic glycerol oxidation reaction, Journal of Materials Chemistry A, 2020한정환
◾ Cation-Regulated Transformation for Continuous Two-Dimensional Tin Monosulfide, CHEMISTRY OF MATERIALS, vol.32 No.6 pp.2313~2320, 2020한정환
◾ Atomic layer deposition of pure In2O3 films for a temperature range of 200–300 °C using heteroleptic liquid In(DMAMP)2(OiPr) precursor, Ceramics International, vol.46 pp.3139~3143, 2020한정환
◾ 고분자 전해질 연료전지용 촉매 소재 개발을 위한 원자층증착법 연구 동향, 한국분말야금학회지, vol.27 No.1 pp.63~71, 2020한정환
◾ Investigation of phases and chemical states of tin titanate films grown by atomic layer deposition, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A, vol.38 No.1, 2020한정환
◾ Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Non-Planar and Flexible Electronics, ACS applied materials & interfaces, 2020한정환
◾ Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching, NANOSCALE RESEARCH LETTERS, vol.15 No.1, 2020한정환
◾ Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer, Advanced Electronic Materials, 2019한정환
◾ 분말 코팅을 위한 원자층증착법, 한국분말야금학회지, 2019한정환
◾ Low-temperature wafer-scale synthesis of twodimensional SnS2, nanoscale, 2018
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원문보기]
한정환◾ Effects of SnO2 layer coated on carbon nanofiber for the methanol oxidation reaction, CERAMICS INTERNATIONAL, vol.44 No.16 pp.19554~19559, 2018
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원문보기]
한정환◾ Growth of Cu2S thin films by atomic layer deposition using Cu(dmamb)(2) and H2S, APPLIED SURFACE SCIENCE, vol.456 pp.501~506, 2018
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한정환◾ Band gap engineering of atomic layer deposited ZnxSn1-xO buffer for efficient Cu(In,Ga)Se-2 solar cell, PROGRESS IN PHOTOVOLTAICS, vol.26 No.9 pp.745~751, 2018
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한정환◾ Manipulating superconducting phases via current-driven magnetic states in rare-earth-doped CaFe2As2, NPG ASIA MATERIALS, vol.10 pp.156~162, 2018
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한정환◾ 원자층증착법을 이용한 수소 생성용 광전기화학 전극소재 개발 동향, 한국분말야금학회지, vol.25 No.1 pp.60~68, 2018
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한정환◾ Thermal atomic layer deposition of In2O3 thin films using dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H2O, APPLIED SURFACE SCIENCE, vol.419 pp.758~763, 2017
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한정환◾ Four-Bits-Per-Cell Operation in an HfO
2-Based Resistive Switching Device, Small, vol.13 No.40, 2017
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한정환◾ Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures, CHEMISTRY OF MATERIALS, vol.29 No.19 pp.8100~8110, 2017
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한정환◾ Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions, CERAMICS INTERNATIONAL, vol.43 No.12 pp.8932~8937, 2017
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한정환◾ Ruthenocene Precursors for Ruthenium-Containing Thin-Film Deposition: An Example of Solvent Nucleophilic Attack on Fulvene, ORGANOMETALLICS, vol.36 No.15 pp.2755~2760, 2017
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한정환◾ Indium complexes bearing donor-functionalized alkoxide ligands as precursors for indium oxide thin films, JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol.833 pp.43~49, 2017
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한정환◾ Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films, JOURNAL OF MATERIALS CHEMISTRY C, vol.5 No.12 pp.3139~3145, 2017
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한정환◾ N-Alkoxy Carboxamide Stabilized Tin(II) and Germanium(II) Complexes for Thin-Film Applications, EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, No.36 pp.5539~5546, 2016
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한정환◾ Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application, ACS APPLIED MATERIALS INTERFACES, vol.8 No.40 pp.26924~26931, 2016
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한정환◾ Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands, APPLIED SURFACE SCIENCE, vol.383 pp.1~8, 2016
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한정환◾ Synthesis of novel tin complexes using functionalized oxime ligands, INORGANICA CHIMICA ACTA, vol.446 pp.1~5, 2016
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한정환◾ Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido) tantalum complex, APPLIED SURFACE SCIENCE, vol.362 pp.176~181, 2016
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한정환◾ Synthesis of Mono-Imido Tungsten Complexes Directly from WCl6, CHEMISTRYSELECT, vol.1 No.1 pp.44~48, 2016
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한정환◾ Trinuclear magnesium complexes stabilized by aminoalkoxide ligands, JOURNAL OF COORDINATION CHEMISTRY, vol.69 No.17 pp.2591~2597, 2016
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한정환◾ Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin,diethylzinc, and oxygen plasma, APPLIED SURFACE SCIENCE, vol.357 pp.672~677, 2015
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한정환◾ Improved Initial Growth Behavior of Sr and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}(2) as Sr-Precursor, CHEMISTRY OF MATERIALS, vol.27 No.11 pp.3881~3891, 2015
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한정환◾ Heteroleptic strontium complexes stabilized by donor-functionalized alkoxide and beta-diketonate ligands, DALTON TRANSACTIONS, vol.44 No.31 pp.14042~14053, 2015
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한정환◾ Effects of in-situ molecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.212 pp.323~328, 2015
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한정환◾ Strong hydrophobizer: laterally chemisorbed low-molecular-weight polydimethylsiloxane, CHEMICAL COMMUNICATIONS, vol.51 pp.5844~5847, 2015
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한정환◾ Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O-2, CHEMISTRY OF MATERIALS, vol.26 No.24 pp.7083~7090, 2014
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한정환◾ SnO2 thin films grown by atomic layer deposition using a novel Sn precursor, APPLIED SURFACE SCIENCE, vol.320 pp.188~194, 2014
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한정환◾ Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O, CHEMISTRY OF MATERIALS, vol.26 pp.6088~6091, 2014
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한정환◾ Trimethylsilylcyclopentadienyl tris(dimethylamino)zirconium as a single-source metal precursor for the atomic layer deposition of ZrxSi1-xO4, THIN SOLID FILMS, vol.564 pp.140~145, 2014
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한정환◾ Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)(3), Gd((PrCp)-Pr-i)(3), and H2O, CHEMISTRY OF MATERIALS, vol.26 No.3 pp.1404~1412, 2014
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한정환◾ Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films, JOURNAL OF MATERIALS CHEMISTRY C, vol.2 No.46 pp.9993~10001, 2014
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한정환◾ Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes, ACS APPLIED MATERIALS & INTERFACES, vol.6 pp.2483~2489, 2014
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한정환◾ Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials, COORDINATION CHEMISTRY REVIEWS, vol.257 pp.3154~3176, 2013
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한정환◾ Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots, ADVANCED MATERIALS, vol.25 pp.1987~1992, 2013
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한정환◾ Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal-Insulator-Metal Capacitors, CHEMISTRY OF MATERIALS, vol.25 pp.953~961, 2013
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한정환◾ Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O-3: growth behaviour and film characteristics, JOURNAL OF MATERIALS CHEMISTRY C, vol.1 No.37 pp.5981~5989, 2013
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한정환◾ Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films, ACS APPLIED MATERIALS & INTERFACES, vol.4 pp.4726~4730, 2012
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한정환◾ Schottky diode with excellent performance for large integration density of crossbar resistive memory, APPLIED PHYSICS LETTERS, 2012
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한정환◾ Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time, CHEMISTRY OF MATERIALS, vol.24 No.8 pp.1407~1414, 2012
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한정환◾ Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers, CHEMISTRY OF MATERIALS, vol.24 pp.4686~4692, 2012
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한정환◾ Strain evolution of each type of grains in poly-crystalline (Ba,Sr)TiO3 thin films grown by sputtering, SCIENTIFIC REPORTS, vol.2, 2012
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한정환◾ Controlling the initial growth behavior of SrTiO3 films by interposing Al2O3 layers between the film and the Ru substrate, JOURNAL OF MATERIALS CHEMISTRY, vol.22 pp.15037~15044, 2012
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한정환◾ Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, vol.5 No.8 pp.262~264, 2011
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한정환◾ Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode, APPLIED PHYSICS LETTERS, vol.99 No.2, 2011
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한정환◾ Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes, MICROELECTRONIC ENGINEERING, vol.88 No.7 pp.1514~1516, 2011
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한정환◾ The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application, JOURNAL OF APPLIED PHYSICS, vol.110 No.2, 2011
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한정환◾ Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors, CHEMISTRY OF MATERIALS, vol.23 No.8 pp.2227~2236, 2011
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한정환◾ Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films, APPLIED SURFACE SCIENCE, vol.257 No.9 pp.4302~4305, 2011
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한정환◾ Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti(O-iPr)(2)(tmhd)(2) on Ru or RuO2 Substrates, CHEMISTRY OF MATERIALS, vol.23 No.4 pp.976~983, 2011
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한정환◾ Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.158 No.8 pp.477~481, 2011
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한정환◾ Electrically Benign Ru Wet Etching Method for Fabricating Ru/TiO2/Ru Capacitor, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.158 No.3 pp.47~51, 2011
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한정환◾ Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H-2 Reduction Gas, CHEMISTRY OF MATERIALS, vol.22 No.20 pp.5700~5706, 2010
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한정환◾ A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory, NANOTECHNOLOGY, vol.21 No.38, 2010
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한정환◾ Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory, ADVANCED FUNCTIONAL MATERIALS, vol.20 No.18 pp.2989~3003, 2010
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한정환◾ Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 interlayer, CHEMISTRY OF MATERIALS, vol.22 No.15 pp.4419~4425, 2010
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한정환◾ Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition, CHEMISTRY OF MATERIALS, vol.22 No.9 pp.2850~2856, 2010
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한정환◾ Electrically Benign Dry-Etching Method for Rutile TiO2 Thin-Film Capacitors with Ru Electrodes, ELECTROCHEMICAL AND SOLID STATE LETTERS, vol.13 No.1 pp.1~4, 2010
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한정환◾ Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor, CHEMISTRY OF MATERIALS, vol.21 No.2 pp.207~209, 2009
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한정환◾ Electronic Conduction Mechanism of SrTiO3 Thin Film Grown on Ru Electrode by Atomic Layer Deposition, ELECTROCHEMICAL AND SOLID STATE LETTERS, vol.12 No.11 pp.69~71, 2009
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한정환◾ Enhanced electrical properties of SrTiO(3) thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications, APPLIED PHYSICS LETTERS, vol.92 No.22, 2008
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한정환◾ Al-doped TiO2 films with ultralow leakage currents for next generation DRAM capacitors, ADVANCED MATERIALS, vol.20 No.8 pp.1429~1429, 2008
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한정환◾ Influences of a crystalline seed layer during atomic layer deposition of SrTiO(3) thin films using Ti(O-iPr)(2)(thd)(2), Sr(thd)(2), and H(2)O, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.155 No.11 pp.253~257, 2008
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한정환◾ Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr(C11H19O2)(2), Ti(Oi-C3H7)(4), and H2O, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol.154 No.6 pp.127~133, 2007
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한정환◾ Pil Ju Youn, Mun Young Woo, Jun Hong Noh, Jeong Hwan Han, Tailoring the Composition and Morphology of RuOx (0≤x≤2) Recombination Layers for High Efficiency Perovskite Tandem Solar Cells, 2024 한국반도체학술대회, 경주화백컨벤션센터, 2024한정환
◾ Wangu Kang, Ji Sang Ahn, Ha Young Lee, Byung Joon Choi, Jeong Hwan Han, Plasma-enhanced Atomic Layer Deposition of TiN/Mo2N Stacks for Advanced Strorage Nodes in Next-generation DRAM Capacitors, 2024 한국반도체학술대회, 경주 화백컨벤션센터, 2024한정환
◾ Ji Sang Ahn, Jeong Hwan Han, Thermal Atomic Layer Deposition of Ru-incorporated MoCx Films as Cu Diffusion Barrier and Seed Layer, 2024 한국반도체학술대회, 경주화백컨벤션센터, 2024한정환
◾ Seon Gu Choi, Wangu Kang, Jeong Hwan Han, Fabrication of Atomic-layer-deposited Ru/Mo2N Bilayer as Bottom Electrode for Next-generation DRAM Capacitor, 2024 한국반도체학술대회, 경주 화백컨벤션센터, 2024한정환
◾ Jae Hyeon Lee, Wangu Kang, Jeong Eun Shin, Jeong Hwan Han, Fabrication of MoO2 Electrode by Thermal Atomic Layer Deposition for High-performance TiO2-Based DRAM Capacitors, 2024한국반도체학술대회, 경주 화백컨벤션센터, 2024한정환
◾ Jeong Eun Shin, Heesun Kim, Bo Keun Park, Jeong Hwan Han, Atomic Layered Deposition of SnO2 Thin Films Using a Novel Sn Precursor, 2024 한국반도체학술대회, 경주 화백 컨벤션센터, 2024한정환
◾ Eun Ji Joo, Jae Hyeon Lee, Jeong Hwan Han, Achieving Low Resistivity and Superior Thermal Stability of Sub-5 nm Atomic Layer Deposited Ru Films by Introducing Ultrathin Oxide Caping Layers, 2024 한국반도체학술대회, 경주 화백컨벤션센터, 2024한정환
◾ Na Yeon Lee, Jeong Hwan Han, Tailoring Composition of N-doped In2O3 Grown by Atomic Layer Deposition for Optimizing the Ferromagnetic and Semiconductor Properties, 2024 한국반도체학술대회, 경주 화백컨벤션센터, 2024한정환
◾ 주은지, 이재현, 한정환, Achieving Low Resistivity of Sub-5 nm Atomic Layer Deposition Ru Films, 2023 한국신뢰성학회 추계학술대회, 디오션리조트 여수, 2023한정환
◾ 안지상, 한정환, Thermal atomic layer deposition of Ru-incorporated MoCx films as Cu diffusion barrier and seed layer, 2023 한국재료학회 추계학술대회, 경주 라한호텔, 2023한정환
◾ 강완구, 안지상, 이하영, 최병준, 한정환, Plasma-enhanced Atomic Layer Deposition of TiN/Mo2N Stacks for Advanced Storage Nodes in Next-generation DRAM Capacitors, 2023 한국재료학회 추계학술대회, 경주라한호텔, 2023한정환
◾ 이재현, 강완구, 신정은, 한정환, Atomic Layer Deposition of Distorted Rutile Structure MoO2 for High-Performance TiO2-Based DRAM Capacitors, 2023 한국재료학회 추계학술대회, 경주 라한 호텔, 2023한정환
◾ 윤필주, 우문영, 임정민, 노준홍, 한정환, 저온 원자층 증착법(ALD)을 이용한 In2O3 기반 전자 수송층 및 고효율 탠덤 페로브스카이트 태양전지 적용 연구, 2023 한국재료학회 추계학술대회, 경주 라한호텔, 2023한정환
◾ Jae Hyeon Lee, Wangu Kang, Jeong Eun Shin, and Jeong Hwan Han, Atomic layer deposition of Sn-doped MoO2 electrode films for high performance TiO2-based DRAM capacitors, AVS(American Vacuum Society) 69, Oregon Convention Center, 2023한정환
◾ Pil-Ju Youn, Mun Young Woo, Jeong min Im, Jun Hong Noh and Jeong Hwan Han, Atomic-layer-Deposited Aluminum doped Indium Oxide Electron Transport Layer for All-Perovskite Tandem Solar Cell, MATERIAL CHALLENGES IN ALTERNATIVE AND RENEWABLE ENERGY 2023 (MCARE2023), Hyatt regency bellevue, 2023한정환
◾ Hyeonhui Jo, Ji Sang Ahn, Jina Kim, Hee Won Jang, and Jeong Hwan Han, Impact of Atomic-Layer-Deposited Mo(C,N) Bottom Electrode on the Ferroelectric Properties of Hf-Zr-O Capacitors, 한국반도체학술대회, 강원도 하이원이조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Jina Kim , Hee Won Jang , Myeong Gil Chae , Bo Keun Park , Taek-Mo Chung , and Jeong Hwan Han, Influence of HfO2-Based Gate Stack on the Performance of P-channel SnO Thin Film Transistor Fabricated by Atomic Layer Deposition, 한국반도체학술대회, 강원도 하이원이조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Wangu Kang, Ji SangAhn, and Jeong Hwan Han, Modified Atomic Layer Deposition of Low-resistivity Molybdenum Carbide and Nitride Electrode for Next Generation DRAM Capacitor, 한국반도체학술대회, 강원도 하이원리조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Hee Won Jang , Sang Hyeon Jo , Na Yeon Lee , Ji-Seoung Jeong , Ji Yeon Ryu , Jeongeun Shin , and Jeong Hwan Han, Low-temperature Atomic Layer Deposition of Indium Oxide Films Using Novel Liquid Indium Precursor, 한국반도체학술대회, 강원도 하이원이조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Wonho Jo, Wangu Kang, and Jeong Hwan Han, Hollow Cathode Plasma Atomic Layer Deposition of Low-Resistivity NbN Films Using Novel Nb Precursor, 한국반도체학술대회, 강원도 하이원이조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Pil Ju Youn , Mun Young Woo , Jeong Min Im , Jun Hong Noh , and Jeong Hwan Han, Atomic-Layer-Deposited SnO2/In2O3 Electron Transport Layer for All-Perovskite Tandem Solar Cell, 한국반도체학술대회, 강원도 하이원리조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Jae Hyeon Lee, Wangu Kang, and Jeong Hwan Han, Fabrication of Atomic-Layer-Deposited MoO2 Films for the Electrode of the DRAM Capacitor, 한국반도체학술대회, 강원도 하이원리조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Jae Yeon Kim, Jae Hyeon Lee, and Jeong Hwan Han, Fabrication of Ultrathin and Low-resistivity Ruthenium Films Deposited by Atomic Layer Deposition, 한국반도체학술대회, 강원도 하이원이조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Ji SangAhn, Wangu Kang, and Jeong Hwan Han, Composition and Work Function Tuning of Plasma-enhanced Atomic-layer Deposited MoCxNy Films, 한국반도체학술대회, 강원도 하이원리조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Daeun Lim, Yeji Lee, Jonghyun Kim, Jina Kim, Jeong Hwan Han, Eun A Kim, Seong-Yong Cho, and Woongkyu Lee, Growth of High-k Rutile TiO2 Thin Films on SnO2 Layers Using Atomic Layer Deposition for DRAM Capacitors, 2023 한국반도체학술대회, 강원도 하이원리조트(그랜드호텔 컨벤션타워), 2023한정환
◾ Jina Kim, Myeong Gil Chae, Hee Won Jang, and Jeong Hwan Han, Low-Power and High-Performance P-Channel SnO Thin Film Transistor Using Hafnia-Based Gate Oxide, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Ji Sang Ahn and Jeong Hwan Han , Work Function Tunable Molybdenum Carbonitride Thin Films by Plasma Enhanced Atomic Layer Deposition for Metal Gate Application, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Jae Yeon Kim, Eun Chong Ko, and Jeong Hwan Han, Growth and Film Characteristics of Ruthenium Thin Films by Thermal Atomic Layer Deposition, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Jae Hyeon Lee, Wangu Kang, and Jeong Hwan Han, RF Magnetron Sputtering of Molybdenum Dioxide for Next-Generation DRAM Electrode, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Hee Won Jang, Sang Hyeon Jo, Ji-Seoung Jeong, Ji Yeon Ryu, and Jeong Hwan Han, Growth and Characterization of Atomic Layer Deposited In2O3 Thin Film Using Novel Liquid in Precursor, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Wonho Jo, Wangu Kang, and Jeong Hwan Han, Hollow Cathode Plasma Atomic Layer Deposition of NbN Film Using Novel Nb Precursor, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Wang Kang and Jeong Hwan Han , Low-Resistivity Molybdenum Carbide and Nitride Thin Films Grown by Modified Atomic Layer Deposition, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Hyeonhui Jo, Jina Kim, Pil Ju Youn, Hee Won Jang, and Jeong Hwan Han, Fabrication of Hf-Zr-O Based Ferroelectric Field Effect Transistor Using In-Ga Sn-O Channel Layer by Atomic Layer Deposition, KISM 2022, Paradise Hotel Busan (Haeundae Beach) | Busan, Korea, 2022한정환
◾ Hyeonhui Jo, J. Won, P. Youn, J. Kim, H. Jang, W. Jo, J. Han, Hafnium Zirconium Oxide-Based Ferroelectric Field Effect Transistor With Atomic-Layer-Deposited Indium Gallium Tin Oxide Channel Layer, ALD/ALE 2022, International Convention Center (ICC) Ghent in Ghent, Belgium, 2022한정환
◾ Jina Kim, M. Chae, B. Park, T. Chung, J. Choi, K. Cho, W. Lee, J. Han , Intense Pulsed Light Annealing of Low-temperature Atomic-layer-deposited SnO Thin Films for P-channel Thin Film Transistor, ALD/ALE 2022, International Convention Center (ICC) Ghent in Ghent, Belgium, 2022한정환
◾ Myeong Gil Chae, J. Kim, B. Park, T. Chung, S. Kim, J. Han, , Optimization of High-Performance P-Channel Sno Thin Film Transistor Using Atomic Layer Deposition, ALD/ALE 2022, International Convention Center (ICC) Ghent in Ghent, Belgium, 2022한정환
◾ Ji Sang Ahn, W. Kang, J. Han, Atomic Layer Deposition of Molybdenum Carbides for Advanced Metallization: The Influences of Mo Precursor and Post-Deposition Annealing, ALD/ALE 2022, International Convention Center (ICC) Ghent in Ghent, Belgium, 2022한정환
◾ 이재현, 한정환, 강완구 , Phase Engineering and Film Characteristics of rf Magnetron Sputtered MoO2 Thin Films, 한국전기전자재료학회, 평창 알펜시아 컨벤션센터, 2022한정환
◾ 김재연, 고은총, 한정환, Growth and Film Characteristics of Ultrathin(<5nm) Ruthenium Film Deposited by Atomic Layer Deposition, 한국전기전자재료학회, 평창 알펜시아 컨벤션센터, 2022한정환
◾ 윤필주, 조현희, 박보근, 정택모, 한정환, Improved Ga2O3 Growth Characteristics Using Three-Step Atomic Layer Deposition Using Newly Synthesized Ga precursor, 한국전기전자재료학회, 평창 알펜시아 컨벤션센터, 2022한정환
◾ 조원호, 강완구, 한정환, Hollow Cathode Plasma Atomic Layer Deposition of NbN Film Using Novel Nb Precursor for Advanced Interconnect Application, 한국전기전자재료학회, 평창 알펜시아 컨벤션센터, 2022한정환
◾ 장희원, 김진아, 한정환, Effect of HfO2 or ZrO2 Sub-Layer on the Growth Characteristics of Atomic-Layer-Deposited SnO Film, 한국전기전자재료학회, 평창 알펜시아 컨벤션센터, 2022한정환
◾ Wangu Kang, Ji SangAhn, and Jeong Hwan Han, Atomic Layer Deposition of Low-resistivity Molybdenum Nitride Using Two Types of F-free Mo Precursors and NH3 Plasma, 한국반도체학술대회, 강원도 하이원 그랜드 호텔(컨벤션 타워), 2022한정환
◾ Ji SangAhn, Wangu Kang, and Jeong Hwan Han, Atomic Layer Deposition of Molybdenum Carbides: The Influences of Mo Precursor and Post-reduction Annealing, 한국반도체학술대회, 강원도 하이원 그랜드 호텔(컨벤션 타워), 2022한정환
◾ 윤필주 , 조현희 , 원종현 , 박보근 , 정택모 , 한정환, Atomic Layer Deposition of Ga2O3 Thin Films by Two Consecutive Pulses of O3 and H2O, 한국반도체학술대회, 강원도 하이원 그랜드호텔(컨벤션타워), 2022한정환
◾ Jong Hyeon Won , Hyeonhui Jo , Pil JuYoun , Heenang Choi , Bo Keun Park , Taek-Mo Chung , and Jeong Hwan Han, High-mobility InGaSnO Thin Film Transistors Fabricated by Plasma-Enhanced Atomic Layer Deposition, 한국반도체학술대회, 강원도 하이원 그랜드호텔(컨벤션타워), 2022한정환
◾ Jae Hyeon Lee, Wangu Kang, and Jeong Hwan Han, Growth and Properties of Molybdenum Oxide Thin Film by rf Magnetron Sputtering, 한국반도체학술대회, 강원도 하이원 그랜드호텔(컨벤션타워), 2022한정환
◾ Jina Kim , Hee Won Jang , Myeong Gil Chae , Wonho Jo , Bo Keun Park , Taek-Mo Chung , and Jeong Hwan Han, Effect of Atomic-Layer-Deposited HfO2 or ZrO2 Interlayer on the Electrical Performance of P-type SnO Thin Film Transistor, 한국반도체학술대회, 강원도 하이원 그랜드호텔(컨벤션타워), 2022한정환
◾ Hyeonhui Jo, Jong Hyeon Won, Pil JuYoun, and Jeong Hwan Han, Indium Gallium Tin Oxide Thin Film Transistor Fabricated by Atomic Layer Deposition, 한국반도체학술대회, 강원도 하이원 그랜드 호텔(컨벤션 타워), 2022한정환
◾ Eun Chong Ko, JaeYeon Kim, and Jeong Hwan Han, Effects of the Thickness and Deposition Temperature on the Resistivity of Atomic-Layer-Deposited Ruthenium Film, 한국반도체학술대회, 강원도 하이원 그랜드 호텔(컨벤션 타워), 2022한정환
◾ Wangu Kang, J. Ahn, J. Han, Atomic Layer Deposition of Low-resistivity Molybdenum Nitride Using F-free Mo Precursors and NH3 Plasma, ALD/ALE 2022, International Convention Center (ICC) Ghent in Ghent, Belgium, 2022한정환
◾ Eun Chong Ko, Jeong Hwan Han, Growth of low resistivity Ruthenium thin film by atomic layer deposition, TACT 2021, online, 2021한정환
◾ 강완구, 한정환, the low resistivity molybdenum thin film by reduction of atomic layer deposited molybdenum carbide using f-free Mo precursor, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 조현희, 원종현, 한정환, Electrical and optical properties of Indium tin oxide thin film with varied Sn concentrations deposited by atomic layer deposition, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 이재현, 강완구, 김재연, 조원호, 한정환, Growth and properties of MoO2 thin film by rf magnetron sputtering, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 채명길, 김진아, 장희원, 박보근, 정택모, 한정환, Optimizationof high-performance p-channel SnO thin film transistor using atomic layer deposition, 한국세라믹학회 추계학술대회, 제주 라마다프라자호텔, 2021한정환
◾ 고은총, 한정환, low resistivity ruthenium thin film by atomic layer deposition, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 원종현, 박보근, 정택모, 한정환, Investigation of In-Ga-Sn-O (IGTO) thin film transistors chracteritics of varying cation composition via plasma-enhanced atomic layer deposition, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 장희원, 김진아, 채명길, 한정환, Growth and characterization of atomic layer deposited ZrO2 thin film as gate dielectric of p-channel thin film transistor, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 안지상, 한정환, Atomic layer deposition of molybdenum carbide thin film as diffusion barrier for Cu metallization, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 김진아, 채명길, 장희원, 박보근, 정택모, 한정환, Effect of discrete feeding method on atomic layer deposited SnO film and its p-channel thin film transistor application, 한국세라믹학회 추계학술대회, 제주 라마다프라자호텔, 2021한정환
◾ 이하영, 조민규, 고재희, 한정환, 최병준, Highly dense titanium nitride thin films grown by hollow cathode plasma atomic layer deposition for Cu diffusion barrier, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ 윤필주, 조현희, 박보근, 정택모, 한정환, atomic layer deposition of Ga2O3 thin films using novel Ga precursor, 한국세라믹학회 추계학술대회, 제주라마다프라자호텔, 2021한정환
◾ Ju Hwan Park, Hee Ju Yun, Jeong Hwan Han, and Byung Joon Choi, Consideration of the reason of reset power reduction in phase change memory by formation of conducting filament in HfO2 interfacial layer, ISIMP 2021, hybrid(online), 2021한정환
◾ Eun Chong Ko and Jeong Hwan Han, Low resistivity ruthenium thin film by atomic layer deposition, ISIMP 2021, online, 2021한정환
◾ 김진아, 채명길, 장희원, 박보근, 정택모, 한정환, switching characteristics of p-channel sno thin film transistor fabricated by atomic layer deposition using discrete feeding method, 한국전기전자재료학회 하계학술대회, 평창알펜시아, 2021한정환
◾ 강완구, 한정환, Aotmic layer deposition of low-resistivity molybdenum thin film using f-free mo precursor for advanced interconnect application, 한국전기전자재료학회 하계학술대회, 평창알펜시아리조트, 2021한정환
◾ 원종현, 윤필주, 박보근, 정택모, 한정환, Investigation of Ga-doped SnO2 thin film transistor using plasma enhanced atomic layer deposition, 한국전기전자재료학회 하계학술대회, 평창알펜시아리조트, 2021한정환
◾ 채명길, 김진아, 장희원, 박보근, 정택모, 한정환, Effect of hydrogen annealing in atomic layer deposited SnO for high-performance p-channel thin film transistor, 한국전기전자재료학 하계학술대회, 평창알펜시아리조트 , 2021한정환
◾ 안지상, 이재현, 한정환, Atomic layer deposited molybdenum carbide thin films using F-free precursor and H2 and its Cu diffusion barrier application, 한국전기전자재료학회 하계학술대회, 평창 알펜시아, 2021한정환
◾ 임다은, 이예지, 김종현, 김진아, 한정환, 이웅규, Growth of Rutile-TiO2 on Rutile SnO2 for gate oxides in MOS capacitors, 한국전기전자재료학회 하계학술대회, 평창 알펜시아리조트, 2021한정환
◾ 이하영, 최석, 조민규, 고재희, 한정환, 최병준, Electrical Characterization of HfN based diode integration with HfO2-based Resistive Random Access Memory, 한국전기전자재료학회 하계학술대회, 평창 알펜시아리조트, 2021한정환
◾ 고은총, 고재희, 한정환, development of low resistivity ru film by atomic layer deposition for advanced interconnect application, 한국전기전자재료학회 하계학술대회, 평창알펜시아리조트, 2021한정환
◾ Wangu Kang, Ji Sang Ahn, and Jeong Hwan Han, Growth of Low-leakage BaTiO3 Thin Film on Polycrystalline Seed Layer by rf Magnetron Sputtering, 한국반도체학술대회, 온라인학회, 2021한정환
◾ Eun Chong Ko, Wangu Kang, and Jeong Hwan Han, Improved Dielectric and Leakage Properties of BaTiO3 Film on SrRuO3 Buffer Electrode, 한국반도체학술대회, 온라인학회, 2021한정환
◾ In-Hwan Baek, Ah-Jin Cho, Sangtae Kim, Ga Yeon Lee, Jeong Hwan Han, Taek-Mo Chung, Cheol Seong Hwang, and Seong Keun Kim, Enlargement of Two-Dimensional SnS Grains at Low Temperatures via Substrate Surface Modification, 한국반도체학술대회, 온라인학회, 2021한정환
◾ Jina Kim, Myeong Gil Chae, Jun Choi, Kwan Hyun Cho, Woongkyu Lee, and Jeong Hwan Han, Flexible P-channel SnO Thin Film Transistor Fabricated by Low Temperature Atomic Layer Deposition and Intense Pulsed Light Annealing, 한국반도체학술대회, 온라인학회, 2021한정환
◾ Jong Hyeon Won, Seong Ho Han, Bo Keun Park, Take-Mo Chung, and Jeong Hwan Han, Low Temperature (<100 ℃) Atomic Layer Deposition Of Polycrystalline SnO2 Using Sn(dmamp)2 And H2O Plasma, 한국반도체학술대회, 온라인학회, 2021한정환
◾ Myeong Gil Chae, Jina Kim, Bo Keun Park, Taek-Mo Chung, and Jeong Hwan Han, Optimized p-type thin-film transistor with atomic-layer-deposited SnO channel, 한국반도체학술대회, 온라인 학회, 2021한정환
◾ Seung Chul Shin, Bo Keun Park, Taek-Mo Chung, and Jeong Hwan Han, 분말 원자층증착법을 이용한 SnS 및 SnO 박막 코팅 및 이를 이용한 TiO2 촉매 특성 향상, 한국반도체학술대회, 온라인학회, 2021한정환
◾ 안지상, 한정환, F-free 전구체를 이용한 Molybdenum 금속 박막의 원자층증착성장 및 물성 평가 연구, 한국반도체학술대회, 온라인학회, 2021한정환
◾ 안지상, 한정환, 차세대 반도체 배선 공정을 위한 Cu대체용 Molybdenum 금속 박막의 원자층박막공정 및 소재 특성 연구, 한국전기전자재료학회 추계학술대회, 경주 the-k 호텔, 2020한정환
◾ 고은총, 강완구, 한정환, SrRuO3 버퍼 전극을 이용한 페로브스카이트 BaTiO3 박막의 유전특성 향상, 한국전기전자재료학 추계학술대회, 경주 the-k 호텔, 2020한정환
◾ Myeong Gil Chae, Bo Keun Park, Take-Mo Chung, and Jeong Hwan Han, Atomic-Layer-Deposition of p-type Tin monoxide using Sn(dmamb)2 and its Thin-Film Transistor application, 16th International Symposium on Novel and Nano Materials, Phoenix Jeju, 2020한정환
◾ Jina Kim, Myeong Gil Chae, Jun Choi, Kwan Hyun Cho, Woongkyu Lee, and Jeong Hwan Han, Fabrication of P-channel SnO Thin Film Transistor on Flexible Substrate by Low-Temperature Atomic Layer Deposition and Intense Pulsed Light Annealing, International symposium on novel and nano materials, phoenix jeju, 2020한정환
◾ 신승철, 박보근, 정택모, 한정환, improved photocatalytic activity of graphitic carbon nitride coated with SnO/SnS Bilayer by powder atomic layer deposition method, 한국전기전자재료학회 춘계학술대회, 휘닉스 평창, 2020한정환
◾ 강완구, 안지상, 한정환, crystallization and electrical properties of rf magnetron sputtered BaTiO3 thin films on the various substrates, 한국전기전자재료학회 춘계학술대회, 휘닉스 평창, 2020한정환
◾ 고은총, 한정환, fabrication of polycrystalline SrRuO3 thin films by rf magnetron sputtering on the various substrates, 한국전기전자재료학 춘계학술대회, 휘닉스 평창 , 2020한정환
◾ 채명길, 김진아, 박보근, 정택모, 한정환, high-mobility p-channel thin film transistor with atomic-layer-deposited SnO channel layer, 한국전기전자재료학회 춘계학술대회, 휘닉스평창, 2020한정환
◾ 원종현, 정택모, 박보근, 한정환, Low Temperature (<100 ℃) Growth of Polycrystalline SnO2 Thin Films by Atomic Layer Deposition Using Sn(dmamp)2 and H2O plasma, 한국전기전자재료학회 춘계학술대회, 휘닉스평창, 2020한정환
◾ 한정환, ALD의 기초원리 및 응용, 학국표면공학회 춘계학술대회, 부산 그린나래 호텔, 2020한정환
◾ Myeong Gil Chae, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han, Atomic layer deposition of p-type Tin monoxide using Sn(dmamb)2, TACT 2019, GIS TAIPEI TECH Convention Center, 2019한정환
◾ SeungChul Shin, Jeong Hwan Han, Improved photocatalytic activity of Sn(O,S)/TiO2 synthesized by powder atomic layer deposition method, ICAE 2019, 제주 라마다호텔, 2019한정환
◾ Wangu Kang, Jeong Hwan Han, Comparative study of thermal and plasma-enhanced MgO ALD using Mg(EtCp)2 precursor, ICAE 2019 program book, 라마다 플라자 제주 호텔, 2019한정환
◾ Eun Chong Ko, Jeong Hwan Han, The effect of post deposition annealing on the properties of SrRuO3 thin films deposited by RF magnetron sputtering, ISIMP 2019 abstract book, Phoenix jeju, 2019한정환
◾ Myeong Gil Chae, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han, Atomic layer deposition of p-type lithium-doped tin monoxide using Sn(dmamp)2, Li(btsa) and H2O, ISIMP 2019 abstract book, Phoenix jeju, 2019한정환
◾ Jong Hyeon Won, Seong Ho Han, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han, comparative study on the growth characteristics and film properties of PEALD SnO2 thin films using different plasma gases, ISIMP 2019 abstract book, Phoenix jeju, 2019한정환
◾ Seung Chul Shin, Jeong Hwan Han, Improved photocatalytic activity of Sn(O,S)/TiO2 synthesized by powder atomic layer deposition method, ICAE 2019, 제주 라마다호텔, 2019한정환
◾ Jeong Hwan Han, Improved catalyst performance by SnOx overcoating using powder atomic layer deposition, 대한화학회 추계학술대회집, 창원컨벤션센터, 2019한정환
◾ In-Hwan Baek, Jung Joon Pyeon, Seong Ho Han, Taek-Mo Chung, Jeong Hwan Han, Han Sol Lee, Cheol Seong Hwang, and Seong Keun Kim, atomic layer deposition of phase-pure 2-D SnS thin films at low temperatures, 2019 한국센서추계학술대회집 제30권 제2-2호, 강릉 라카이샌드파인리조트, 2019한정환
◾ Jung Joon Pyeon, In-Hwan Baek, WooChul Lee, Hansol Lee, Sung Ok Won, Taek-Mo Chung, Jeong Hwan Han, Chong-Yun Kang, SeongKeun Kim, Low-temperature PEALD synthesis of 2D SnS2 for future emerging devices, 한국센서학회추계학술대회집, 강릉 라카이샌드파인리조트, 2019한정환
◾ Seung Chul Shin, Jeong Hwan Han, Improved photocatalytic activity of Sn(O,S)/TiO2 synthesized by powder atomic layer deposition method, 한국진공학회 하계정기학술대회 회보집, 대명비발디파크, 2019한정환
◾ Myeong Gil Chae, Bo Keun Park, Teak-Mo Chung, Jeong Hwan Han, Properties of p-type SnO Thin film grown by atomic layer deposition using Sn(dmamb)2 and H2O, 한국진공학회 하계정기학술대회 회보집, 대명비발디파크, 2019한정환
◾ Wangu Kang, Eun Chong Ko, Byung Joon Choi, Jeong Hwan Han, Comparative study of thermal and plasma-enhanced MgO ALD using Mg(EtCp)2 precursor, 한국진공학회 하계정기학술대회 회보집, 대명비발디파크, 2019한정환
◾ Seung Chul Shin and Jeong Hwan Han, Improved photocatalytic activity of Sn(O,S)/TiO2 synthesized by powder atomic layer deposition method, 한국반도체학술대회집, 강원도 웰리힐리파크, 2019한정환
◾ Jong Hyeon Won, Myeong Gil Chae, Seong Ho Han, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han, Comparative study on the growth characteristics and film properties of PEALD SnO2 thin films using different plasma gases, 한국발도쳇학술대회집, 강원도 웰리힐리파크, 2019한정환
◾ Wangu Kang and Jeong Hwan Han, Growth behavior and films properties of atomic-layer-deposited MgO Thin film using Mg(EtCp)2 precursor and H2O, 한국반도체학술대회, 강원도 웰리힐리파크, 2019한정환
◾ 한정환, Applications of Atomic layer deposition in chalcogenides thin-film solar cells, 한국세라믹학회 추계학술대회, 코엑스, 2018한정환
◾ 신승철, 한정환, 원자층증착법을 이용한 Sn(O,S)/TiO2 광촉매 소재 합성 및 가시광선 반응성 향상 연구, 한국분말야금학회 추계학술대회, 부산해운대그랜드호텔, 2018한정환
◾ 원종현, 채명길, 한정환, 플라즈마 원자층증착 기술을 이용한 SnO2 박막증착 및 반응가스에 따른 박막 특성 변화, 한국분말야금학회 추계학술대회, 부산해운대그랜드호텔, 2018한정환
◾ 강완구, 한정환, 원자층증착법을 이용한 DRAM 커패시터용 MgO 박막 성장 거동 및 전기적 특성 연구, 한국분말야금학회 추계학술대회, 부산해운대그랜드호텔, 2018한정환
◾ 정원희, 김용, 류성연, 한정환, 최병준, 코스퍼터링법으로 제작한 Ag도핑된 HfO2 박막의 전기적 특성, 한국분말야금학회 추계학술대회, 부산해운대그랜드호텔, 2018한정환
◾ JungJoon Pyeon, In-Hwan Baek, Taek-Mo Chung, Jeong Hwan Han, Chong-Yun Kang, Seong Keun Kim, Synthesis of Single Phase Two-dimensional SnS2 by Plasma-enhanced Atomic Layer Deposition, AVS 65th international symposium & exhibition, long beach convention center, 2018한정환
◾ In-Hwan Baek, Jung Joon Pyeon, Taek-Mo Chung, Jeong Hwan Han, Cheol Seong Hwang, Seong Keun Kim, Atomic Layer Deposited Quaternary In-Zn-Sn-O Thin Films for Emerging Electronic Devices, The 18th International Meeting on Information Display, 부산 벡스코, 2018한정환
◾ G.Y. Lee, S.H. Han, E.A. Jung, C.G. Kim, B.K. Park, J.H. Han, Taek-Mo Chung, Development New Metal Precursors for Atomic Layer Deposition at KRICT, ALD/ALE 2018, 인천 송도 컨벤시아, 2018한정환
◾ D.H. Kim, S.C. Shin, Seok Choi, J.H. Han, B.J. Choi, Pretreatment Effect of SnO2 Layer Coated on Carbon Nanofiber by Atomic Layer Deposition, ALD/ALE 2018, 인천 송도컨벤시아, 2018한정환
◾ Seungmin Yeo, J.H. Han, B.K. Park, C.G. Kim, T.-M. Chung, Atomic Layer Deposition of Cuprous Oxide Thin Films using bis(1-dimethylamino-2-methyl-2-butoxy)Copper Precursor, ALD/ALE 2018, 인천 송도 컨벤시아, 2018한정환
◾ J.H. Han, Raphael Agbenyeke, Spontaneous Etching Behavior of Oxide and Sulfide Underlayers during Atomic Layer Deposition of Cu2-xS using Cu(dmamb)2 and H2S, ALD/ALE 2018, 인천 송도 컨벤시아, 2018한정환
◾ In-Hwan Baek, J.J. Pyeon, T.-M. Chung, J.H. Han, C.S. Hwang, S.K. Kim, Low-temperature Growth of 2-D SnS Thin Films by Atomic Layer Deposition, ALD/ALE 2018, 인천 송도컨벤시아, 2018한정환
◾ Jung Joon Pyeon, I.-H Baek, T.-M. Chung, J.H. Han, C.-Y. Kang, S.K. Kim,, Wafer-scale Growth of Single Phase SnS2 Thin Films by Atomic Layer Deposition, ALD/ALE 2018, 인천송도컨벤시아, 2018한정환
◾ Younjin Jang, J.S. Kim, E.S. Hwang, S. Lee, S.M. Jeon, J.H. Han, C.S. Hwang, Reduction of Hysteresis in p-Type Atomic Layer Deposited SnO Thin Film Transistors by Adopting Interfacial Layers, ALD/ALE 2018, 인천 송도컨벤시아, 2018한정환
◾ Dong Ha Kim, Dong-Yo Shin, Young-Geun Lee, Geon-Hyoung An, Jeong Hwan Han, Hyo-Jin Ahn, and Byung Hoon Choi, Effects of SnO2 Layer coated on Carbon Nanofiber for the methanol oxidation, 15th International Symposium on Novel and Nano Materials, Tivoli Oriente, Lisbon, Portugal, 2018한정환
◾ 김용, 정원희, 윤희주, 한정환, 최병준, 저전압 구동과 자기제어특성을 갖는 Pt/HfO2/Ti 크로스바 어레이 소자, 한국세라믹학회 춘계연구발표회, 창원 컨벤션센터, 2018한정환
◾ Jung Joon Pyeon, In-Hwan Baek, Taek-Mo Chung, Jeong Hwan Han, Chong-Yun Kang, Seong Keun Kim, Synthesis of 2-Dimensional Single Phase SnS2 by Atomic Layer Deposition, 제25회반도체학술대회, 하이원리조트, 2018한정환
◾ In-Hwan Baek, Jung Joon Pyeon, Taek-Mo Chung, Jeong Hwan Han, Cheol Seong Hwang, and Seong Keun Kim, Synthesis of 2-D SnS Thin Films and Their Potential Applications, 제25회반도체학술대회, 하이원리조트, 2018한정환
◾ Younjin Jang, Jun Shik Kim, Eun Suk Hwang, Seungjun Lee, Seok Min Jeon, Jeong Hwan Han, and Cheol Seong Hwang, Hysteric Transfer Characteristics of P-Type Thin Film Transistors with SnO Thin Films Grown by Atomic Layer Deposition, 제25회반도체학술대회, 하이원리조트, 2018한정환
◾ 한정환, Atomic Layer Deposition of Tin Oxides for Versatile Applications, 제25회반도체학술대회, 하이원리조트, 2018한정환
◾ Jeong Hwan Han, Atomic Layer Deposited Tin Oxides for Thin Film Transistor and Catalyst applications, International Symposium on Innovation in Materials Processing, Phoenix Jeju, 2017한정환
· Jeong Hwan Han et al. Chapter 7. “Front End of the Line Process”, Atomic layer deposition for Semiconductors, Springer, 2014
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